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參數資料
型號: MJE350
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: High Voltage General Purpose Applications
中文描述: 0.5 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-126
文件頁數: 1/4頁
文件大小: 124K
代理商: MJE350
1
Motorola Bipolar Power Transistor Device Data
. . . designed for use in line–operated applications such as low power, line–operated
series pass and switching regulators requiring PNP capability.
High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc
Excellent DC Current Gain —
hFE = 30–240 @ IC = 50 mAdc
Plastic Thermopad Package
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
VCEO
VEB
IC
PD
Value
300
Unit
Vdc
Emitter–Base Voltage
3.0
Vdc
Collector Current — Continuous
500
mAdc
Total Power Dissipation @ TC = 25 C
20
Watts
JC
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
Symbol
VCEO(sus)
Min
300
Max
Unit
Vdc
(VEB = 3.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
hFE
30
240
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE350/D
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS
20 WATTS
CASE 77–08
REV 7
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相關代理商/技術參數
參數描述
MJE350 制造商:ON Semiconductor 功能描述:BIP-300V 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, PNP, -300V
MJE350 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-126 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP TO-126
MJE350G 功能描述:兩極晶體管 - BJT 0.5A 300V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE350STU 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE370 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SILICON COMPLEMENTARY POWER TRANSISTORS
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