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參數資料
| 型號： | MJE371 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR PNP SILICON |
| 中文描述： | 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 封裝： | PLASTIC, CASE 77-09, TO-225, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 122K |
| 代理商： | MJE371 |
1
Motorola Bipolar Power Transistor Device Data
. . . designed for use in general–purpose amplifier and switching circuits. Recom-
mended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry
circuitry.
DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc
MJE371 is Complementary to NPN MJE521
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
VCEO
VCB
VEB
IC
Value
40
Unit
Vdc
Collector–Base Voltage
40
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
4.0
Adc
Derate above 25 C
320
mW/ C
(VCB = 40 Vdc, IE = 0)
Emitter–Base Cutoff Current
IEBO
—
100
μ
Adc
(1) Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE371/D
4 AMPERE
POWER TRANSISTOR
PNP SILICON
40 VOLTS
40 WATTS
CASE 77–08
REV 2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJE371G | 功能描述:兩極晶體管 - BJT 4A 40V 40W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE371G | 制造商:ON Semiconductor 功能描述:RF Bipolar Transistor |
| MJE4340 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| MJE4341 | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(16A,100-160V,125W) |
| MJE4342 | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(16A,100-160V,125W) |
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