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參數(shù)資料
| 型號(hào)： | MJE253 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS |
| 中文描述： | 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 235K |
| 代理商： | MJE253 |
1
Motorola Bipolar Power Transistor Device Data
. . . designed for low power audio amplifier and low–current, high–speed switching
applications.
High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253
High DC Current Gain @ IC = 200 mAdc
hFE = 40–200
hFE
= 40–120 — MJE243, MJE253
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
High Current Gain Bandwidth Product —
fT = 40 MHz (Min) @ IC = 100 mAdc
ICBO = 100 nAdc (Max) @ Rated VCB
Collector Current — Continuous
Peak
4.0
8.0
Adc
Derate @ 25 C
1.5
0.012
Watts
W/ C
Operating and Storage Junction
TJ, Tstg
–65 to +150
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
θ
θ
JA
8.34
83.4
C/W
C/W
16
20
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
0
40
60
100
120
160
12
P
1.6
0
1.2
8.0
0.8
4.0
0.4
80
140
T
P
T
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE243/D
4 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
100 VOLTS
15 WATTS
*Motorola Preferred Device
CASE 77–08
TO–225AA
REV 7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE243 | POWER TRANSISTORS COMPLEMENTARY SILICON |
| MJE243 | 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS |
| MJE2955T | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS |
| MJE2955T | COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJE2955T | PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE253G | 功能描述:兩極晶體管 - BJT 4A 100V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE253G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJE254 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJE270 | 功能描述:兩極晶體管 - BJT 2A 100V Bipolar RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE270G | 功能描述:兩極晶體管 - BJT 2A 100V Bipolar Power NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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