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參數資料
| 型號： | MJE2955TAS |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數： | 1/59頁 |
| 文件大小： | 357K |
| 代理商： | MJE2955TAS |
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3–628
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general–purpose amplifier and switching applications.
DC Current Gain Specified to 10 Amperes
High Current Gain — Bandwidth Product —
fT = 2.0 MHz (Min) @ IC = 500 mAdc
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
60
Vdc
Collector–Base Voltage
VCB
70
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current
IC
10
Adc
Base Current
IB
6.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
MJE3055T, MJE2955T
PD
75
0.6
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
1.67
_C/W
Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
10
5.0
Figure 1. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.2
0.1
20
30
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 25°C (D = 0.1)
I C
,C
OLLE
CT
OR
C
URREN
T
(AMP
)
dc
7.0
10
5.0 ms
1.0 ms
50 60
0.5
7.0
3.0
0.7
0.3
TJ = 150°C
100
s
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150_C. TC is vari-
able depending on conditions. Second breakdown pulse lim-
its are valid for duty cycles to 10% provided TJ(pk) v 150_C.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown. (See AN415A)
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE2955T
MJE3055T
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 VOLTS
75 WATTS
*Motorola Preferred Device
*
PNP
NPN
*
CASE 221A–06
TO–220AB
REV 1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJE2955TD127 | 制造商:Motorola Inc 功能描述: |
| MJE2955TG | 功能描述:兩極晶體管 - BJT 10A 60V 125W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE2955TG-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
| MJE2955TTU | 功能描述:兩極晶體管 - BJT PNP Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE2955TTU_Q | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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