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參數資料
| 型號： | MJE4343 |
| 廠商： | MOSPEC SEMICONDUCTOR CORP. |
| 英文描述： | POWER TRANSISTORS(16A,100-160V,125W) |
| 中文描述： | 功率晶體管（16A條,100 - 160V，功率為125） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 197K |
| 代理商： | MJE4343 |
1
Motorola Bipolar Power Transistor Device Data
. . . designed for use in high power audio amplifier applications and high voltage
switching regulator circuits.
High Collector–Emitter Sustaining Voltage —
NPN
VCEO(sus) = 140 Vdc — MJE4342
VCEO(sus)
= 160 Vdc — MJE4343
High DC Current Gain — @ IC = 8.0 Adc
hFE = 35 (Typ)
Low Collector–Emitter Saturation Voltage —
PNP
MJE4352
MJE4353
MAXIMUM RATINGS
MJE4342
MJE4343
Temperature Range
5.0
s, Duty Cycle
(1) Pulse Test: Pulse Width
10%.
3.5
0
Figure 1. Power Derating
Reference: Ambient Temperature
TA, AMBIENT TEMPERATURE (
°
C)
25
50
100
125
3.0
2.5
0.5
75
150
1.0
1.5
2.0
P
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE4342/D
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140–160 VOLTS
CASE 340D–01
TO–218 TYPE
REV 2
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| MJE4352 | POWER TRANSISTORS(16A,100-160V,125W) |
| MJE4353 | POWER TRANSISTORS(16A,100-160V,125W) |
| MJE521 | 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJE4343_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High?Voltage High Power Transistors |
| MJE4343G | 功能描述:兩極晶體管 - BJT 16A 160V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE4350 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| MJE4351 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| MJE4352 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
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