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參數資料
| 型號： | MJE521 |
| 廠商： | 意法半導體 |
| 英文描述： | SILICON NPN TRANSISTOR |
| 中文描述： | 硅NPN晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 128K |
| 代理商： | MJE521 |
1
Motorola Bipolar Power Transistor Device Data
. . . designed for use in general–purpose amplifier and switching circuits. Recom-
mended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
circuitry.
DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc
Complementary to PNP MJE371
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
VCEO
VCB
VEB
IC
Value
40
Unit
Vdc
Collector–Base Voltage
40
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
4.0
Adc
Derate above 25 C
0.32
W/ C
(VCB = 30 Vdc, IE = 0)
Emitter–Base Cutoff Current
IEBO
—
100
μ
Adc
(1) Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE521/D
4 AMPERE
POWER TRANSISTOR
NPN SILICON
40 VOLTS
40 WATTS
CASE 77–08
REV 1
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| MJE5731 | 1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS |
| MJE5731A | POWER TRANSISTORS PNP SILICON |
| MJE5731 | POWER TRANSISTORS PNP SILICON |
| MJE5730 | POWER TRANSISTORS PNP SILICON |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJE521 | 制造商:STMicroelectronics 功能描述:Bipolar Transistor |
| MJE521_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SILICON NPN TRANSISTOR |
| MJE521G | 功能描述:兩極晶體管 - BJT 4A 40V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE52T | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| MJE53T | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
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