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參數資料
| 型號： | MJF31C |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS |
| 中文描述： | 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221D-03, TO-220, FULL PACK-3 |
| 文件頁數： | 4/8頁 |
| 文件大小： | 90K |
| 代理商： | MJF31C |
MJF31C* (NPN), MJF32C* (PNP)
http://onsemi.com
4
t, TIME (ms)
1.0
0.7
0.01
0.01
0.1
0.07
r
1.0
1.0
100
Z
θ
JC(t) = r(t) R
θ
JC
R
θ
JC(t) = 3.125
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) Z
θ
JC(t)
P(pk)
t1
t2
SINGLE PULSE
1.0 k
D = 0.5
0.05
DUTY CYCLE, D = t1/t2
Figure 4. Thermal Response
0.1
0.05
0.03
0.02
0.5
0.3
0.2
0.02
0.05
0.2
0.5
2.0
5.0
200
500
10
20
50
0.2
0.02
0.01
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
20
5.0
50
100
Figure 5. Active Region Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN
LIMITED @ TJ
≤
150
°
C
THERMAL LIMIT @ TC = 25
°
C
(SINGLE PULSE)
BONDING WIRE LIMIT
1.0ms
100
μ
s
2.0
1.0
10
5.0
I
5.0ms
CURVES APPLY
BELOW RATED VCEO
MJF31C,
MJF32C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150 C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05
0.1
0.2
0.7
0.03
0.3
0.5
0.07
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
3.0
2.0
t
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
1.0
2.0
3.0
0.2
0.5
1.0
5.0
0.1
2.0 3.0
0.3
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
300
C
200
100
70
50
30
10
20
40
30
tf @ VCC = 30 V
tf @ VCC = 10 V
ts
′
IB1 = IB2
IC/IB = 10
ts
′
= ts - 1/8 tf
TJ = 25
°
C
TJ = +25
°
C
Ceb
Ccb
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相關代理商/技術參數 |
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| MJF31C_08 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Plastic Power Transistors |
| MJF31CG | 功能描述:兩極晶體管 - BJT 3A 100V 30W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJF32C | 功能描述:兩極晶體管 - BJT 3A 100V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJF32CG | 功能描述:兩極晶體管 - BJT 3A 100V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJF36400 | 制造商:Square D by Schneider Electric 功能描述:MOLDED CASE CIRCUIT BREAKER 600V 400A |
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