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參數資料
| 型號： | MJF31C |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS |
| 中文描述： | 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221D-03, TO-220, FULL PACK-3 |
| 文件頁數： | 5/8頁 |
| 文件大?。?/td> | 90K |
| 代理商： | MJF31C |
MJF31C* (NPN), MJF32C* (PNP)
http://onsemi.com
5
V
TJ, JUNCTION TEMPERATURE (
°
C)
103
-0.4
101
100
10-2
102
10-1
10-3
107
105
104
102
106
103
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (AMP)
h
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (AMP)
300
500
0.05 0.07
0.3
3.0
0.03
100
70
50
30
10
7.0
5.0
0.1
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 10. “On” Voltages
VCE = 2.0 V
0.7 1.0
0.5
1.6
2.0
2.0
5.0
20
1000
1.0
0.8
0.4
10
0
100
200
500
50
25
°
C
TJ = 150
°
C
-55
°
C
1.2
1.4
0.003
IC, COLLECTOR CURRENT (AMPS)
1.0
0.8
0.4
1.2
0.6
0.2
0
0.005 0.01 0.02 0.03 0.05
0.1
+2.5
IC = 0.3 A
20
60
80
100
120
160
140
40
V
TJ = 25
°
C
1.0 A
3.0 A
0.2 0.3
0.5
1.0
2.0 3.0
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
V
θ
°
+2.0
+1.5
+1.0
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
0.0030.005 0.01
0.02
0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0
*APPLIES FOR IC/IB
≤
hFE/2
TJ = -65
°
C TO +150
°
C
*
θ
VC FOR VCE(sat)
θ
VB FOR VBE
Figure 11. Temperature Coefficients
,
I
-0.3
-0.2
-0.1
0
+0.1
+0.2
+0.3
+0.4
+0.5
+0.6
Figure 12. Collector Cut–Off Region
Figure 13. Effects of Base–Emitter Resistance
VCE = 30 V
TJ = 150
°
C
100
°
C
25
°
C
REVERSE
FORWARD
ICES
R
VCE = 30 V
IC = 10 x ICES
IC
≈
ICES
IC = 2 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
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| MJF32CG | 功能描述:兩極晶體管 - BJT 3A 100V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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