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參數資料
| 型號： | MJF44H11 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Power Transistors |
| 中文描述： | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | CASE 221D-03, ISOLATED TO-220, FULL PACK-3 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 80K |
| 代理商： | MJF44H11 |
MJF44H11 (NPN), MJF45H11 (PNP)
http://onsemi.com
3
Figure 1. Thermal Response
t, TIME (ms)
0.01
0.01
0.05
1.0
2.0
5.0
10
20
50
500
1.0 k
0.1
0.5
0.2
1.0
0.7
0.2
0.1
0.05
r
Z
JC(t)
= r(t) R
JC
R
JC
= 1.56
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
Z
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
SINGLE PULSE
R
0.5
D = 0.5
0.05
0.3
0.07
0.03
0.02
0.02
100
200
0.1
0.02
0.01
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
100
1.0
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
5.0
10
T
C
≤
70
°
C
DUTY CYCLE
≤
50%
I
2.0
3.0
20
30
50
100
1.0
7.0
MJF44H11/MJF45H11
70
1.0 s
dc
0.1
0.2
0.3
0.5
2.0
3.0
5.0
10
20
30
50
10 s
100 s
1.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
- V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 150
°
C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
150
°
C. T
J(pk)
may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 3. Power Derating
0
T, TEMPERATURE (
°
C)
0
40
60
100
120
160
40
T
C
20
60
P
0
2.0
T
A
1.0
3.0
80
140
T
C
T
A
20
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJF44H11_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SILICON POWER TRANSISTORS 10 AMPERES 80 VOLTS, 36 WATTS |
| MJF44H11_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJF44H11G | 功能描述:兩極晶體管 - BJT 10A 80V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJF44H11GOS-ND | 制造商: 功能描述: 制造商:undefined 功能描述: |
| MJF45H11 | 功能描述:兩極晶體管 - BJT 10A 80V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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