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參數資料
| 型號： | MJL3281A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 15 A, 260 V, NPN, Si, POWER TRANSISTOR, TO-264AA |
| 封裝： | PLASTIC, TO-3PBL, TO-264, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 147K |
| 代理商： | MJL3281A |
1
Motorola Bipolar Power Transistor Device Data
"
!
The MJL3281A and MJL1302A are PowerBase power transistors for high power
audio, disk head positioners and other linear applications.
Designed for 100 W Audio Frequency
Gain Complementary:
— Gain Linearity from 100 mA to 7 A
— High Gain — 60 to 175
— hFE = 45 (Min) @ IC = 8 A
Low Harmonic Distortion
High Safe Operation Area — 1 A/100 V @ 1 Second
High fT — 30 MHz Typical
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
VCEX
IC
200
Vdc
Collector–Base Voltage
200
Vdc
Emitter–Base Voltage
7
Vdc
Collector–Emitter Voltage – 1.5 V
200
Vdc
Collector Current — Continuous
Collector Current
—
Peak (1)
15
25
Adc
Base Current — Continuous
IB
PD
1.5
Adc
Total Power Dissipation @ TC = 25
°
C
Derate Above 25
°
C
200
1.43
Watts
W/
°
C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.7
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
200
—
—
Vdc
Emitter–Base Voltage
(IE = 100 Adc, IC = 0)
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
VEBO
7
—
—
Vdc
(continued)
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJL3281A/D
15 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
200 VOLTS
200 WATTS
*Motorola Preferred Device
CASE 340G–02, STYLE 2
TO–264
REV 1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJL3281A_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS |
| MJL3281AG | 功能描述:兩極晶體管 - BJT 15A 230V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJL3281AG | 制造商:ON Semiconductor 功能描述:Triac Package/Case:TO-264 |
| MJL4281A | 功能描述:兩極晶體管 - BJT 15A 350V 230W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJL4281A_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS |
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