- 您現在的位置：買賣IC網 > PDF目錄382326 > MJW18020 (ON SEMICONDUCTOR) NPN Silicon Power Transistors High Voltage Planar PDF資料下載
參數資料
| 型號： | MJW18020 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon Power Transistors High Voltage Planar |
| 中文描述： | 30 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247AD |
| 封裝： | CASE 340L-02, TO-247, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 55K |
| 代理商： | MJW18020 |
Semiconductor Components Industries, LLC, 2002
January, 2002 – Rev. 0
1
Publication Order Number:
MJW180203/D
MJW18020
Preferred Devices
NPN Silicon Power
Transistors High Voltage
Planar
The MJW18020 planar High Voltage Power Transistor is
specifically Designed for motor control applications, high power
supplies and UPS’s for which the high reproducibility of DC and
Switching parameters minimizes the dead time in bridge
configurations.
Mains features include:
High and Excellent Gain Linearity
Fast and Very Tight Switching Times Parameters t
si
and t
fi
Very Stable Leakage Current due to the Planar Structure
High Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
V
CEO
450
Vdc
Collector–Base Breakdown Voltage
V
CES
1000
Vdc
Collector–Base Voltage
V
CBO
1000
Vdc
Emitter–Base Voltage
V
EBO
9.0
Vdc
Collector Current – Continuous
–
Peak (Note 1.)
I
C
30
45
Adc
Base Current – Continuous
–
Peak (Note 1.)
I
B
6.0
10
Adc
Total Power Dissipation @ T
C
= 25 C
Derate Above 25 C
P
D
250
2.0
Watts
W/ C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to
+150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction–to–Case
R
θ
JC
0.5
C/W
Thermal Resistance,
Junction–to–Ambient
R
θ
JA
50
C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8” from Case for 5 Seconds
T
L
275
C
1. Pulse Test: Pulse Width = 5 s, Duty Cycle
≤
10%.
Device
Package
Shipping
ORDERING INFORMATION
MJW18020
TO–247
http://onsemi.com
TO–247
CASE 340K
STYLE 3
30 Units/Rail
2
1
30 AMPERES
1000 VOLTS BV
CES
450 VOLTS BV
CEO
250 WATTS
3
MARKING DIAGRAM
MJW
18020
LLYWW
MJW18020= Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
Preferred
devices are recommended choices for future use
and best overall value.
1 BASE
2 COLLECTOR
3 EMITTER
相關PDF資料 |
PDF描述 |
|---|---|
| MJW21193 | Silicon Power Transistors |
| MJW21194 | Silicon Power Transistors |
| MJW21195 | Silicon Power Transistors |
| MK4116 | 16,384 X 1 BIT DYNAMIC RAM |
| MK4116P-2 | 16,384 X 1 BIT DYNAMIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJW18020_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon Power Transistors High Voltage Planar |
| MJW18020G | 功能描述:兩極晶體管 - BJT 20A 450V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW21191 | 功能描述:兩極晶體管 - BJT 8A 150V 100W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW21191G | 功能描述:兩極晶體管 - BJT 8A 150V 100W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW21192 | 功能描述:兩極晶體管 - BJT 8A 150V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。