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參數資料
| 型號： | MJH11019 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-218 |
| 封裝： | CASE 340D-02, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 212K |
| 代理商： | MJH11019 |
1
Motorola Bipolar Power Transistor Device Data
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. . . designed for use as general purpose amplifiers, low frequency switching and
motor control applications.
High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
Collector–Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17
VCEO(sus)
= 200 Vdc (Min) — MJH11020, 19
VCEO(sus)
= 250 Vdc (Min) — MJH11022, 21
Low Collector–Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
Monolithic Construction
MAXIMUM RATINGS
MJH
11018
Collector–Emitter Voltage
VEB
IC
150
200
250
Vdc
Collector–Base Voltage
Emitter–Base Voltage
150
5.0
200
250
Vdc
Vdc
Collector Current — Continuous
15
Adc
Derate Above 25 C
1.2
W/ C
Operating and Storage Junction
TJ, Tstg
–65 to +150
C
P
160
0
TC, CASE TEMPERATURE (
°
C)
40
60
100
120
160
80
140
20
Figure 1. Power Derating
0
20
40
60
80
100
140
120
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJH11017/D
15 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150, 200, 250 VOLTS
150 WATTS
*Motorola Preferred Device
CASE 340D–01
相關PDF資料 |
PDF描述 |
|---|---|
| MJH11020 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJH11018 | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS |
| MJH11019 | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS |
| MJH11020 | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS |
| MJH11021 | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJH11019G | 功能描述:達林頓晶體管 20A 200V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJH11019G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR PNP -200V |
| MJH11020 | 功能描述:達林頓晶體管 15A 200V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJH11020G | 功能描述:達林頓晶體管 15A 200V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJH11020G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 200V SOT-93 |
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