- 您現在的位置：買賣IC網 > PDF目錄382325 > MJL21195 (ON SEMICONDUCTOR) STARTER KIT, EASY 500; Output type:Relay; Temp, op. max:55(degree C); Temp, op. min:-25(degree C) RoHS Compliant: Yes PDF資料下載
參數資料
| 型號： | MJL21195 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | STARTER KIT, EASY 500; Output type:Relay; Temp, op. max:55(degree C); Temp, op. min:-25(degree C) RoHS Compliant: Yes |
| 中文描述： | 16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-264AA |
| 封裝： | CASE 340G-02, TO-3BPL, TO-264, 3 PIN |
| 文件頁數： | 3/6頁 |
| 文件大小： | 135K |
| 代理商： | MJL21195 |
3
Motorola Bipolar Power Transistor Device Data
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
hF
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
hF
hF
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
I
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
I
PNP MJL21195
NPN MJL21196
hF
TYPICAL CHARACTERISTICS
PNP MJL21195
PNP MJL21195
NPN MJL21196
NPN MJL21196
1000
100
10
100
10
1.0
0.1
1000
10
100
10
1.0
0.1
1000
100
10
100
10
1.0
0.1
1000
10
100
10
1.0
0.1
30
0
25
20
15
10
5.0
0
5.0
10
15
20
25
30
0
25
20
15
5.0
0
5.0
10
15
20
25
10
VCE = 20 V
TJ = 100
°
C
25
°
C
–25
°
C
VCE = 20 V
TJ = 100
°
C
25
°
C
–25
°
C
VCE = 5 V
TJ = 100
°
C
25
°
C
–25
°
C
VCE = 5 V
TJ = 100
°
C
25
°
C
–25
°
C
TJ = 25
°
C
IB = 0.5 A
1.0 A
1.5 A
2.0 A
TJ = 25
°
C
IB = 0.5 A
1.0 A
1.5 A
2.0 A
100
100
相關PDF資料 |
PDF描述 |
|---|---|
| MJL21196 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJL3281A | COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJL4281A | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| MJL4302A | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| MJW1302A | Complementary NPN-PNP Silicon Power Bipolar Transistors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJL21195_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W |
| MJL21195_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Power Transistors |
| MJL21195G | 功能描述:兩極晶體管 - BJT BIP PNP 16A 250V FG RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJL21196 | 功能描述:兩極晶體管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJL21196G | 功能描述:兩極晶體管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。