- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄382326 > MJL21196 (ON SEMICONDUCTOR) COMPLEMENTARY SILICON POWER TRANSISTORS PDF資料下載
參數(shù)資料
| 型號(hào)： | MJL21196 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-264AA |
| 封裝： | CASE 340G-02, TO-3BPL, TO-264, 3 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 135K |
| 代理商： | MJL21196 |
4
Motorola Bipolar Power Transistor Device Data
VB
Figure 9. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
S
Figure 10. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
S
Figure 11. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
VB
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200
°
C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.
PNP MJL21195
NPN MJL21196
TYPICAL CHARACTERISTICS
PNP MJL21195
NPN MJL21196
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
I
3.0
2.5
2.0
1.5
1.0
0.5
0
100
10
1.0
0.1
1.4
100
10
1.0
0.1
1.2
1.0
0.8
0.6
0.4
0.2
0
10
100
10
1.0
0.1
1.0
0.1
10
100
10
1.0
0.1
1.0
0.1
100
1.0
10
100
1000
10
1.0
0.1
TJ = 25
°
C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25
°
C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25
°
C
VCE = 20 V
VCE = 5 V
TJ = 25
°
C
VCE = 20 V
VCE = 5 V
TJ = 25
°
C
250 ms
50 ms
10 ms
1 Sec
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJL3281A | COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJL4281A | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| MJL4302A | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| MJW1302A | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| MJW3281A | Complementary NPN-PNP Silicon Power Bipolar Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJL21196G | 功能描述:兩極晶體管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJL3281 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS |
| MJL3281A | 功能描述:兩極晶體管 - BJT 15A 230V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJL3281A_05 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS |
| MJL3281AG | 功能描述:兩極晶體管 - BJT 15A 230V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。