- 您現在的位置：買賣IC網 > PDF目錄382326 > MJL4302A (ON SEMICONDUCTOR) Complementary NPN-PNP Silicon Power Bipolar Transistors PDF資料下載
參數資料
| 型號： | MJL4302A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| 中文描述： | 15 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-264AA |
| 封裝： | CASE 340G-02, TO-3PBL, 3 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 55K |
| 代理商： | MJL4302A |
MJL4281A (NPN) MJL4302A (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage
(I
C
= 50 mA, I
B
= 0)
V
CE(sus)
350
Vdc
Collector Cutoff Current
(V
CE
= 200 V, I
B
= 0)
I
CEO
100
Adc
Collector Cutoff Current
(V
CB
= 350 Vdc, I
E
= 0)
I
CBO
50
Adc
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
I
EBO
5.0
Adc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(V
CE
= 50 Vdc, t = 1.0 s (nonrepetitive)
(V
CE
= 100 Vdc, t = 1.0 s (nonrepetitive)
I
S/b
4.5
1.0
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 5.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 8.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 15 Adc, V
CE
= 5.0 Vdc)
h
FE
80
80
80
80
50
10
250
250
250
250
CollectorEmitter Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.8 Adc)
V
CE(sat)
1.0
Vdc
EmitterBase Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.8 A)
V
BE(sat)
1.4
Vdc
BaseEmitter ON Voltage
(I
C
= 8.0 Adc, V
CE
= 5.0 Vdc)
V
BE(on)
1.5
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, f
test
= 1.0 MHz)
f
T
35
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1.0
MHz)
C
ob
600
pF
相關PDF資料 |
PDF描述 |
|---|---|
| MJW1302A | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| MJW3281A | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| MJW18020 | NPN Silicon Power Transistors High Voltage Planar |
| MJW21193 | Silicon Power Transistors |
| MJW21194 | Silicon Power Transistors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJL4302AG | 功能描述:兩極晶體管 - BJT 15A 350V 230W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJLF147-X | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:WIDE BANDWIDTH QUAD JFET INPUT OPERATIONAL AMPLIFIER |
| MJLF155-X | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:JFET INPUT LOW POWER |
| MJL-G-64-2-30 | 制造商:MAXCONN 功能描述:CON,RJ11,R,RA,1R, 6P,2PORT,6C |
| MJLM108A-X | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:OPERATIONAL AMPLIFIERS (SINGLE) |
發布緊急采購，3分鐘左右您將得到回復。