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參數資料
| 型號： | MMBD101LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Schottky Barrier Diodes |
| 中文描述： | 肖特基勢壘二極管 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 52K |
| 代理商： | MMBD101LT1 |
LESHAN RADIO COMPANY, LTD.
G15–1/2
MAXIMUM RATINGS
MBD101
MMBD101LT1
value
7.0
Rating
symbol
v
R
p
F
unit
Volts
Reverse Voltage
Forward Power Dissipation
@TA=25 °C
Derate above 25 °C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBD101LT1=4M
ELECTRICAL CHARACTERISTICS(T
A
=25 °C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
μ
Adc)
Diode Capacitance
(V
R
= 0,f =1.0MHz,Note1)
Forward Voltage(1)
(I
F
= 10mAdc)
Reverse Leakage
(V
R
= 3.0Vdc)
280
2.2
225
1.8
mW
mW/ °C
°C
°C
T
J
T
stg
+150
–55 to +150
Symbol
V
(BR)R
Min
7.0
Typ
10
Max
—
Unit
Volts
C
T
—
0.88
1.0
pF
V
F
—
0.5
0.6
Volts
I
R
—
0.02
0.25
μ
Adc
NOTE: MMBD101LT1
is also available in bulk packaging.Use
MMBD101L
as the device title to order this device in bulk.
1
3
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
MMBD101LT1
Schottky Barrier Diodes
SILICON SCHOTTKY
BARRIER DIODES
3
CATHODE
1
ANODE
Designed primarily for UHF mixer applications but suitable also for use
in detector and ultra-fast switching circuits.Supplied in an inexpensive
plastic package for low-cost,high-volume consumer requirements.Also
available in Surface Mount package.
Low Noise Figure—6.0dB Typ@1.0GHz
Very Low Capacitance—Less Than 1.0pF@zero Volts
High Forward Conductance—0.5volts(typ)@I
F
=10mA
相關PDF資料 |
PDF描述 |
|---|---|
| MMBD101 | ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84% |
| MMBD101 | Schottky Barrier Diodes |
| MMBD2835LT1G | Monolithic Dual Switching Diodes |
| MMBD2836LT1G | Monolithic Dual Switching Diodes |
| MMBD2837LT1G | Monolithic Dual Switching Diodes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBD101LT1G | 功能描述:肖特基二極管與整流器 7V 225mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MMBD101TS | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD101W | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD101WS | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD110T1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Schottky Barrier Diodes |
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