- 您現在的位置：買賣IC網 > PDF目錄384741 > MMBF2201NT1G (ON SEMICONDUCTOR) Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323 PDF資料下載
參數資料
| 型號： | MMBF2201NT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323 |
| 中文描述： | 300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SC-70, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 64K |
| 代理商： | MMBF2201NT1G |
Publication Order Number:
MMBF2201NT1/D
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 4
1
MMBF2201NT1
Preferred Device
Power MOSFET
300 mAmps, 20 Volts
NChannel SC70/SOT323
These miniature surface mount MOSFETs low R
DS(on)
assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dcdc converters, power management in portable and
batterypowered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
Miniature SC70/SOT323 Surface Mount Package Saves
Board Space
PbFree Package is Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
Vdc
GatetoSource Voltage Continuous
V
GS
±
20
Vdc
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 70
°
C
Pulsed Drain Current (t
p
≤
10 s)
I
D
I
D
I
DM
300
240
750
mAdc
Total Power Dissipation @ T
A
= 25
°
C
(Note 1)
Derate above 25
°
C
P
D
150
1.2
mW
mW/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to 150
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
833
°
C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted on G10/FR4 glass epoxy board using minimum recommended
footprint.
3
1
2
NChannel
300 mAMPS, 20 VOLTS
R
DS(on)
= 1
Device
Package
Shipping
ORDERING INFORMATION
MMBF2201NT1
SC70/
SOT323
3000 Tape & Reel
SC70/SOT323
CASE 419
STYLE 8
MARKING DIAGRAM
AND PIN ASSIGNMENT
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
N1 = Device Code
M
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
MMBF2201NT1G
SC70/
SOT323
(PbFree)
3000 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Gate
3
Drain
2
Source
2
3
1
N1 M
相關PDF資料 |
PDF描述 |
|---|---|
| MMBF2202PT1G | Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323 |
| MMBT3903 | NPN (GENERAL PURPOSE TRANSISTOR) |
| MMBT4123 | NPN (GENERAL PURPOSE TRANSISTOR) |
| MMBT4126LT1 | General Purpose Transistor PNP Silicon |
| MMBTA63LT1G | Darlington Transistors PNP Silicon |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBF2201PT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
| MMBF2202PT1 | 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF2202PT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323 |
| MMBF2202PT1G | 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF2202PT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
發布緊急采購，3分鐘左右您將得到回復。