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參數資料
| 型號： | MMBF2201PT1 |
| 廠商： | Motorola, Inc. |
| 英文描述： | LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
| 中文描述： | 低RDS小訊號MOSFET TMOS是單P通道場效應晶體管 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 142K |
| 代理商： | MMBF2201PT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
$ !
"
# !""# !"
Part of the GreenLine
Portfolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SC–70/SOT–323 Surface Mount Package Saves
Board Space
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VGS
ID
ID
IDM
20
Vdc
Gate–to–Source Voltage — Continuous
±
20
Vdc
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 70
°
C
Drain Current
— Pulsed Drain Current (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C(1)
Derate above 25
°
C
300
240
750
mAdc
PD
150
1.2
mW
mW/
°
C
Operating and Storage Temperature Range
TJ, Tstg
R
θ
JA
TL
– 55 to 150
°
C
Thermal Resistance — Junction–to–Ambient
833
°
C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
260
°
C
DEVICE MARKING
N1
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMBF2201NT1
7
″
8 mm embossed tape
3000
MMBF2201NT3
13
″
8 mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBF2201NT1/D
SEMICONDUCTOR TECHNICAL DATA
CASE 419–02, Style 7
SC–70/SOT–323
N–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 1.0 OHM
Motorola Preferred Device
3 DRAIN
1
GATE
2 SOURCE
REV 1
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| MMBF2202PT1 | P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
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| MMBF4391LT1 | JFET Switching Transistors |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBF2202PT1 | 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF2202PT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323 |
| MMBF2202PT1G | 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF2202PT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
| MMBF4091 | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
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