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參數資料
| 型號： | MMBF4392L |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | RKZ Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 05V; Output Voltage (Vdc): 05V; Power: 2W; High Isolation 2W Converter; Approved for Medical Applications; Custom Solutions Available; 3kVDC & 4kVDC Isolation Options; UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Efficiency to 84% |
| 中文描述： | 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 封裝： | CASE 318-07, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 139K |
| 代理商： | MMBF4392L |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
N–Channel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
VDG
VGS
IG(f)
30
Vdc
Drain–Gate Voltage
30
Vdc
Gate–Source Voltage
30
Vdc
Forward Gate Current
50
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
556
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MMBF4391LT1 = 6J; MMBF4392LT1 = 6K; MMBF4393LT1 = 6G
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 1.0
μ
Adc, VDS = 0)
V(BR)GSS
30
—
Vdc
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0, TA = 25
°
C)
(VGS = 15 Vdc, VDS = 0, TA = 100
°
C)
IGSS
—
—
1.0
0.20
nAdc
μ
Adc
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
VGS(off)
–4.0
–2.0
–0.5
–10
–5.0
–3.0
Vdc
Off–State Drain Current
(VDS = 15 Vdc, VGS = –12 Vdc)
(VDS = 15 Vdc, VGS = –12 Vdc, TA = 100
°
C)
ID(off)
—
—
1.0
1.0
nAdc
μ
Adc
1. FR–5 = 1.0
Thermal Clad is a trademark of the Bergquist Company
0.75
0.062 in.
Order this document
by MMBF4391LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
2 SOURCE
3
GATE
1 DRAIN
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| MMBF4391 | RKZ Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 05V; Output Voltage (Vdc): 05V; Power: 2W; High Isolation 2W Converter; Approved for Medical Applications; Custom Solutions Available; 3kVDC & 4kVDC Isolation Options; UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Efficiency to 84% |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBF4392LT1 | 功能描述:JFET 30V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF4392LT1G | 功能描述:JFET 30V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF4392LT1G | 制造商:ON Semiconductor 功能描述:JFET |
| MMBF4393 | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF4393_Q | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
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