- 您現在的位置：買賣IC網 > PDF目錄371121 > MMBF5457LT1 (ON SEMICONDUCTOR) JFET - General Purpose Transistor PDF資料下載
參數資料
| 型號： | MMBF5457LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | JFET - General Purpose Transistor |
| 中文描述： | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 103K |
| 代理商： | MMBF5457LT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
N–Channel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
VDG
VGS(r)
IG
25
Vdc
Drain–Gate Voltage
25
Vdc
Reverse Gate–Source Voltage
25
Vdc
Gate Current
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
556
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MMBF5457LT1 = 6D
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 10
μ
Adc, VDS = 0)
V(BR)GSS
25
—
—
Vdc
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100
°
C)
IGSS
—
—
—
—
1.0
200
nAdc
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
VGS(off)
0.5
—
–6.0
Vdc
Gate Source Voltage
(VDS = 15 Vdc, ID = 100
μ
Adc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(2)
(VDS = 15 Vdc, VGS = 0)
VGS
—
–2.5
—
Vdc
IDSS
1.0
—
5.0
mAdc
1. FR–5 = 1.0
2. Pulse Test: Pulse Width
≤
630 ms, Duty Cycle
≤
10%.
0.75
0.062 in.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by MMBF5457LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
2 SOURCE
3
GATE
1 DRAIN
相關PDF資料 |
PDF描述 |
|---|---|
| MMBF5457 | N-Channel General Purpose Amplifier |
| MMBF5484LT1 | JFET Transistor |
| MMBF5484 | SFET RF,VHF, UHF, Amplitiers |
| MMBFJ177LT1 | JFET Chopper |
| MMBFJ177LT1 | JFET Chopper |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBF5457LT1G | 功能描述:JFET 25V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF5457LT1G | 制造商:ON Semiconductor 功能描述:JFET |
| MMBF5458 | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF5458_Q | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF5459 | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
發布緊急采購，3分鐘左右您將得到回復。