欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: MMBF4416LT1G
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: JFET VHF/UHF Amplifier Transistor N-Channel
中文描述: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB
封裝: CASE 318-08, 3 PIN
文件頁數: 1/6頁
文件大小: 157K
代理商: MMBF4416LT1G
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 3
1
Publication Order Number:
MMBF4416LT1/D
MMBF4416LT1
Preferred Device
JFET VHF/UHF Amplifier
Transistor
NChannel
Features
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DS
30
Vdc
DrainGate Voltage
V
DG
30
Vdc
GateSource Voltage
V
GS
30
Vdc
Gate Current
I
G
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board,
(Note 1) T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
556
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
SOT23 (TO236)
CASE 318
STYLE 10
Device
Package
Shipping
ORDERING INFORMATION
MMBF4416LT1
SOT23
3,000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBF4416LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
1
2
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
M6A M
M6A = Device Code
M
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
2 SOURCE
3
GATE
1 DRAIN
相關PDF資料
PDF描述
MMBF5457LT1G JFET - General Purpose Transistor N-Channel
MMBF5460LT1G JFET - General Purpose Transistor P-Channel
MMBF5460LT1 JFET General Purpose Transistor P Channel(P溝道JFET通用晶體管)
MMBF5484LT1G JFET Transistor N−Channel
MMBF5484LT1 JFET Transistor N(N溝道JFET晶體管)
相關代理商/技術參數
參數描述
MMBF4416LT1G 制造商:ON Semiconductor 功能描述:TRANSISTORJFETN-Channel30V V(BR)DSS5
MMBF5103 功能描述:JFET N-Ch amplifier Lo Freq/Lo Noise RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel
MMBF5103_Q 功能描述:JFET N-Ch amplifier Lo Freq/Lo Noise RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel
MMBF5434 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel
MMBF5434_Q 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel
主站蜘蛛池模板: 宕昌县| 那曲县| 宁波市| 明溪县| 岳普湖县| 连城县| 万源市| 镇远县| 耿马| 广安市| 鸡泽县| 乌什县| 武隆县| 防城港市| 绵阳市| 郓城县| 乌兰察布市| 出国| 象州县| 信丰县| 宁夏| 伊川县| 塘沽区| 龙门县| 尖扎县| 平顶山市| 永嘉县| 汨罗市| 潼关县| 梨树县| 上蔡县| 岑巩县| 施秉县| 石嘴山市| 时尚| 保定市| 南投县| 永靖县| 鹤壁市| 肥西县| 曲沃县|