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參數資料
| 型號： | MMBF5457LT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | JFET - General Purpose Transistor |
| 中文描述： | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 文件頁數： | 2/6頁 |
| 文件大小： | 103K |
| 代理商： | MMBF5457LT1 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance(2)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|Yfs|
1000
—
5000
μ
mhos
Reverse Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|yrs|
—
10
50
μ
mhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
4.5
7.0
pF
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width
≤
630 ms, Duty Cycle
≤
10%.
Crss
—
1.5
3.0
pF
TYPICAL CHARACTERISTICS
f, FREQUENCY (kHz)
Figure 1. Noise Figure versus Frequency
RS, SOURCE RESISTANCE (Megohms)
Figure 2. Noise Figure versus Source
Resistance
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. Typical Drain Characteristics
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 4. Common Source Transfer
Characteristics
14
0.01
4
3
2
0
1.0
0.4
0.2
0
–1.2
12
1
0.1
1.0
10
100
5
10
8
6
4
2
0.8
0.6
0
5
10
15
20
25
0
0.6
0.4
0.2
0.8
1.2
1.0
–0.8
–0.4
0
1.2
0
,
D
I
,
D
I
N
N
0.001
0.01
0.1
1.0
10
VDS
= 15 V
VGS
= 0
RS
= 1 M
VDS = 15 V
VGS = 0
f = 1 kHz
VDS = 15 V
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
VGS(off)
–1.2 V
VGS(off)
–1.2 V
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBF5457LT1G | 功能描述:JFET 25V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF5457LT1G | 制造商:ON Semiconductor 功能描述:JFET |
| MMBF5458 | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF5458_Q | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF5459 | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
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