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參數(shù)資料
型號: MMBR521LT1
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: HIGH-FREQUENCY TRANSISTOR PNP SILICON
中文描述: S BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB
文件頁數(shù): 1/8頁
文件大小: 151K
代理商: MMBR521LT1
1
MMBR521LT1 MRF5211LT1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
The RF Line
Designed primarily for use in the high–gain, low–noise small–signal
amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast
switching times.
High Current Gain–Bandwidth Product —
fT = 3.4 GHz (Typ) @ IC = –35 mAdc (MMBR521LT1)
fT = 4.2 GHz (Typ) @ IC = –50 mAdc (MRF5211LT1)
Low Noise Figure @ f = 1.0 GHz —
NF(matched) = 2.5 dB (Typ) (MMBR521LT1)
NF(matched) = 2.8 dB (Typ) (MRF5211LT1)
High Power Gain — Gpe (matched) = 11 dB (Typ)
Guaranteed RF Parameters
Surface Mounted SOT–23 (MMBR521LT1) & SOT–143 (MRF5211LT1)
Offer Improved RF Performance
Lower Package Parasitics
Higher Gain
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Ratings
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
PD(max)
–10
Vdc
Collector–Base Voltage
–20
Vdc
Emitter–Base Voltage
Power Dissipation (1) TC = 75
°
C,
Derate linearly above TC = 75
°
C @
Collector Current — Continuous
–2.5
Vdc
All
0.333
4.44
W
mW/
°
C
IC
–70
mA
°
C
°
C
Maximum Junction Temperature
TJmax
Tstg
150
Storage Temperature
THERMAL CHARACTERISTICS
All
–55 to +150
Ratings
Symbol
Value
Unit
Thermal Resistance, Junction to Case
(MMBR521LT1, MRF5211LT1)
DEVICE MARKING
R
θ
JC
225
°
C/W
MMBR521LT1 = 7M
NOTE:
1. Case Temperature is measured on the collector lead closest to the package. For case
temperatures above +75
°
C: PDISP(max) = (TJmax – TC) / R
θ
JC
MRF5211LT1 = 04
Order this document
by MMBR521LT1/D
SEMICONDUCTOR TECHNICAL DATA
IC = –70 mA
HIGH–FREQUENCY
TRANSISTOR
PNP SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
MMBR521LT1
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF5211LT1
REV 7
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