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參數資料
| 型號： | MMBT2222ATTD |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | General Purpose Transistor |
| 中文描述： | 通用晶體管 |
| 文件頁數： | 6/6頁 |
| 文件大小： | 124K |
| 代理商： | MMBT2222ATTD |
MMBT2222ATT1
http://onsemi.com
6
PACKAGE DIMENSIONS
SC75/SOT416
CASE 46301
ISSUE C
DIM
A
B
C
D
G
H
J
K
L
S
MIN
0.70
1.40
0.60
0.15
1.00 BSC
0.10
1.45
0.10
0.50 BSC
MAX
0.90
1.80
0.90
0.30
MIN
0.028
0.055
0.024
0.006
0.039 BSC
0.004
0.057
0.004
0.020 BSC
MAX
0.035
0.071
0.035
0.012
INCHES
MILLIMETERS
0.10
0.25
1.75
0.20
0.004
0.010
0.069
0.008
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008)
B
A
B
S
D
G
3 PL
0.20 (0.008) A
K
J
L
C
H
3
2
1
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
ON Semiconductor
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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Phone
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MMBT2222ATT1/D
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT2222AT-TP | 功能描述:兩極晶體管 - BJT 600mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222AW | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Silicon General Purpose Transistor |
| MMBT2222AW_10 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:NPN GENERAL PURPOSE SWITCHING TRANSISTOR |
| MMBT2222AWT1 | 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222AWT1_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor |
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