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參數資料
| 型號： | MMBT2222AWT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | General Purpose Transistor NPN Silicon(NPN型通用晶體管) |
| 中文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419-04, SC-70, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 77K |
| 代理商： | MMBT2222AWT1 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 4
1
Publication Order Number:
MMBT2222AWT1/D
MMBT2222AWT1
Preferred Device
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT323/SC70 package which
is designed for low power surface mount applications.
Features
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
40
Vdc
CollectorBase Voltage
V
CBO
75
Vdc
EmitterBase Voltage
V
EBO
6.0
Vdc
Collector Current Continuous
I
C
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
T
A
= 25
°
C
P
D
150
mW
Thermal Resistance, JunctiontoAmbient
R
JA
833
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Device
Package
Shipping
ORDERING INFORMATION
MMBT2222AWT1
SC70
SC70
CASE 419
STYLE 3
3000/Tape & Reel
2
3
1
Preferred
devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
P1 = Specific Device Code
M = Date Code*
= PbFree Package
(Note: Microdot may be in either location)
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MMBT2222AWT1G
SC70
(PbFree)
3000/Tape & Reel
*Date Code orientation may vary depending
upon manufacturing location.
P1 M
1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT2222AWT1_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor |
| MMBT2222AWT1G | 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222AWT1GOSDKR-ND | 制造商: 功能描述: 制造商:undefined 功能描述: |
| MMBT2222AWT1H | 制造商:ON Semiconductor 功能描述: |
| MMBT2222AWT3G | 功能描述:兩極晶體管 - BJT SS SC70 GP XSTR NPN 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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