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參數資料
| 型號： | MMBT3906E |
| 廠商： | 江蘇長電科技股份有限公司 |
| 英文描述： | TRANSISTOR |
| 中文描述： | 晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 198K |
| 代理商： | MMBT3906E |
C
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
B E
1. BASE
2. EMITTER
3. COLLECTOR
E B
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
MMBT3906E
TRANSISTOR
DESCRIPTION
PNP Epitaxial planar SiliconTransistor
FEATURES
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT3904E)
Ultra-Small Surface Mount Package
Also Available in Lead Free Version
APPLICATION
General Purpose Amplifier
,switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:3N
C
3N
B E
MAXIMUM RATINGS* T
A
=25
Symbol
Parameter
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current -Continuous
P
D
Power Dissipation
R
JA
Thermal Resistance, Junction to Ambient
T
J
Operating Temperature
T
stg
Storage and Temperature
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V
(BR)CBO
Collector-emitter breakdown voltage
V
(BR)CEO
Emitter-base breakdown voltage
V
(BR)EBO
Collector cut-off current
I
CEX
Emitter cut-off current
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
V
CE(sat)1
Collector-emitter saturation voltage
V
CE(sat)2
V
BE(sat)1
Base-emitter saturation voltage
V
BE(sat)2
Transition frequency
℃
unless otherwise noted
Value
-40
-40
-5
-200
150
833
150
-55-150
Units
V
V
V
mA
mW
℃
/W
℃
℃
Test conditions
MIN
TYP
MAX
UNIT
I
C
=-10μA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10μA,I
C
=0
V
CE
=-30V,V
EB(off)
=-3V
V
EB
=-5V,I
C
=0
V
CE
=-1V,I
C
=-0.1mA
V
CE
=-1V,I
C
=-1mA
V
CE
=-1V,I
C
=-10mA
V
CE
=-1V,I
C
=-50mA
V
CE
=-1V,I
C
=-100mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
V
CE
=-20V,I
C
=-10mA,f=100MHz
-40
V
-40
V
-5
V
-0.05
μA
-0.1
μA
60
80
100
300
60
DC current gain
30
-0.25
V
-0.4
V
-0.65
-0.85
V
-0.95
V
f
T
250
MHz
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT3906-F | 制造商:DIODES 功能描述:PNP TRANSISTOR (LEAD FREE) |
| MMBT3906FA-7B | 制造商:Diodes Incorporated 功能描述:GENERAL PURPOSE TRANSISTOR X2-DFN0806-3 T&R 10K - Tape and Reel 制造商:Diodes Incorporated 功能描述:TRANS PNP 40V 200MW X2-DFN0806-3 |
| MMBT3906FN3 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:PNP GENERAL PURPOSE SWITCHING TRANSISTOR |
| MMBT3906FW | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| MMBT3906FZ-7B | 功能描述:TRANS PNP 40V 0.2A X2-DFN060 制造商:diodes incorporated 系列:- 包裝:剪切帶（CT） 零件狀態:在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:200mA 電壓 - 集射極擊穿（最大值）:40V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:400mV @ 5mA，50mA 電流 - 集電極截止（最大值）:50nA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:- 功率 - 最大值:435mW 頻率 - 躍遷:280MHz 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-XFDFN 供應商器件封裝:X2-DFN0606-3 標準包裝:1 |
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