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參數資料
| 型號： | MMBT489LT1_06 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications |
| 中文描述： | 高電流表面貼裝NPN硅晶體管的負荷開關在便攜式應用管理 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 63K |
| 代理商： | MMBT489LT1_06 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 4
1
Publication Order Number:
MMBT489LT1/D
MMBT489LT1
High Current Surface Mount
NPN Silicon Switching
Transistor for Load
Management in
Portable Applications
Features
PbFree Package is Available
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEO
30
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
I
C
1.0
A
Collector Current Peak
I
CM
2.0
A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1)
@T
= 25
°
C
Derate above 25
°
C
P
D
310
2.5
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
(Note 1)
R
JA
403
°
C/W
Total Device Dissipation (Note 2)
@T
A
= 25
°
C
Derate above 25
°
C
P
D
710
5.7
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
(Note 2)
R
JA
176
°
C/W
Total Device Dissipation (Single Pulse < 10 s)
P
Dsingle
575
mW
Junction and Storage Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 X 1.0 inch Pad
Device
Package
Shipping
ORDERING INFORMATION
MMBT489LT1
SOT23
3000/Tape & Reel
COLLECTOR
3
1
BASE
2
EMITTER
30 VOLTS, 2.0 AMPERES
NPN TRANSISTOR
SOT23 (TO236)
CASE 318
STYLE 6
3
2
1
http://onsemi.com
3000/Tape & Reel
MMBT489LT1G
SOT23
(PbFree)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
N3 M
N3 = Specific Device Code
M
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT489LT1G | 功能描述:兩極晶體管 - BJT 1A 50V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5087 | 功能描述:兩極晶體管 - BJT SOT-23 PNP GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5087_Q | 功能描述:兩極晶體管 - BJT SOT-23 PNP GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5087LT1 | 功能描述:兩極晶體管 - BJT 50mA 50V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5087LT1G | 功能描述:兩極晶體管 - BJT 50mA 50V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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