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參數資料
| 型號： | MMBT5550LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage Transistors NPN Silicon(NPN型高電壓晶體管) |
| 中文描述： | 60 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 75K |
| 代理商： | MMBT5550LT1 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 6
1
Publication Order Number:
MMBT5550LT1/D
MMBT5550LT1,
MMBT5551LT1
Preferred Device
High Voltage Transistors
NPN Silicon
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
MMBT5550
MMBT5551
V
CEO
140
160
Vdc
CollectorBase Voltage
MMBT5550
MMBT5551
V
CBO
160
180
Vdc
EmitterBase Voltage
V
EBO
6.0
Vdc
Collector Current Continuous
I
C
600
mAdc
Electrostatic Discharge
Human Body Model
Machine Model
ESD
> 8000
> 400
V
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 1) @T
= 25
°
C
Derate Above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
556
°
C/W
Total Device Dissipation Alumina
Substrate (Note 2) @T
A
= 25
°
C
Derate Above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
Preferred
devices are recommended choices for future use
and best overall value.
MARKING
DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
1
x1x M
SOT23 (TO236)
CASE 318
STYLE 6
1
2
3
Device
Package
Shipping
ORDERING INFORMATION
MMBT5550LT1
SOT23
3,000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT5550LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
MMBT5551LT1
SOT23
3,000 / Tape & Reel
MMBT5551LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
x1x = Device Code
M1F = MMBT5550LT
G1 = MMBT5551LT
M
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
MMBT5551LT3
SOT23
10,000/Tape & Reel
MMBT5551LT3G
SOT23
(PbFree)
10,000/Tape & Reel
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相關代理商/技術參數 |
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| MMBT5550LT1G | 功能描述:兩極晶體管 - BJT SS HV XSTR NPN 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5550LT3G | 功能描述:兩極晶體管 - BJT SS HV XSTR NPN 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5550NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| MMBT5551 | 功能描述:兩極晶體管 - BJT SOT-23 NPN GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5551 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORNPN160V0.6ASOT23 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR,NPN,160V,0.6A,SOT23 |
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