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參數資料
| 型號： | MMBT6429LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Amplifier Transistors NPN Silicon |
| 中文描述： | 200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 163K |
| 代理商： | MMBT6429LT1G |
Semiconductor Components Industries, LLC, 2005
March, 2005 Rev. 3
1
Publication Order Number:
MMBT6428LT1/D
MMBT6428LT1,
MMBT6429LT1
Amplifier Transistors
NPN Silicon
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
6428LT1
6429LT1
Unit
CollectorEmitter Voltage
V
CEO
50
45
Vdc
CollectorBase Voltage
V
CBO
60
55
Vdc
EmitterBase Voltage
V
EBO
6.0
Vdc
Collector Current Continuous
I
C
200
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Total Device Dissipation FR5 Board
(Note 1) T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance,
JunctiontoAmbient
R
JA
556
°
C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance,
JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
1. FR5 = 1.0
2. Alumina = 0.4
0.75
0.3
0.062 in.
0.024 in. 99.5% alumina.
http://onsemi.com
SOT23 (TO236)
CASE 318
STYLE 6
MARKING DIAGRAM
MMBT6429LT1
Device
Package
Shipping
ORDERING INFORMATION
MMBT6428LT1
SOT23
3000 Tape & Reel
SOT23
3000 Tape & Reel
MMBT6428LT1G
SOT23
(PbFree)
3000 Tape & Reel
MMBT6429LT1G
SOT23
(PbFree)
3000 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
2
3
1
xxx M
xxx
= Specific Device Code
MMBT6428LT1 1KM
MMBT6429LT1 1L
= Date Code
M
COLLECTOR
3
1
BASE
2
EMITTER
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| MMBT6515 | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT6515_Q | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT6517LT1 | 功能描述:兩極晶體管 - BJT 500mA 350V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT6517LT1G | 功能描述:兩極晶體管 - BJT 500mA 350V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT6517LT1G-CUT TAPE | 制造商:ON 功能描述:MMBT Series 350 V 100 mA SMT NPN Silicon Transistor - SOT-23 |
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