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參數(shù)資料
| 型號： | MMBT6521LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Amplifier Transistor NPN Silicon |
| 中文描述： | 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 117K |
| 代理商： | MMBT6521LT1G |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 4
1
Publication Order Number:
MMBT6521LT1/D
MMBT6521LT1
Amplifier Transistor
NPN Silicon
Features
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
25
Vdc
CollectorBase Voltage
V
CBO
40
Vdc
EmitterBase Voltage
V
EBO
4.0
Vdc
Collector Current — Continuous
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 1) @T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
556
°
C/W
Total Device Dissipation Alumina
Substrate, (Note 2) @T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
1
2
3
SOT23 (TO236)
CASE 31808
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
MMBT6521LT1
SOT23
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SOT23
(PbFree)
3000/Tape & Reel
MMBT6521LT1G
1
RO M
RO
M
= Specific Device Code
= Date Code*
= PbFree Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
MARKING DIAGRAM
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT6589T1G | 功能描述:兩極晶體管 - BJT 2A 30V Switching PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT7002K | 制造商:Diotec Semiconductor 功能描述: |
| MMBT8099LT1 | 功能描述:兩極晶體管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT8099LT1G | 功能描述:兩極晶體管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT8099LT1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
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