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參數資料
| 型號： | MMBT6589T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Current Surface Mount PNP Silicon Switching Transistor for Switching Transistor for Portable Applications |
| 中文描述： | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 318G-02, TSOP-6 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 69K |
| 代理商： | MMBT6589T1 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 1
1
Publication Order Number:
MMBT6589T1/D
MMBT6589T1
High Current Surface
Mount PNP Silicon
Switching Transistor for
Load Management in
Portable Applications
Features
PbFree Package is Available
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEO
30
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
I
C
1.0
Adc
Collector Current Peak
I
CM
2.0
A
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation T
A
= 25
°
C
Derate above 25
°
C
P
(Note 1)
540
4.4
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
(Note 1)
230
°
C/W
Total Device Dissipation T
A
= 25
°
C
Derate above 25
°
C
P
(Note 2)
925
7.4
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
(Note 2)
135
°
C/W
Total Device Dissipation
(Single Pulse < 10 s)
P
Dsingle
(Note 2)
(Note 3)
1.3
W
Junction and Storage Temperature
Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 X 1.0 inch Pad
3. ref: Figure 8
Device
Package
Shipping
ORDERING INFORMATION
MMBT6589T1
TSOP6
TSOP6
CASE 318G
STYLE 7
3000/Tape & Reel
MARKING DIAGRAM
COLLECTOR
1, 2, 5
3
BASE
6
EMITTER
30 VOLTS, 2.0 AMPS
PNP TRANSISTOR
4
56
321
MMBT6589T1G
TSOP6
(PbFree)
3000/Tape & Reel
G3 M
1
G3
M
= Specific Device Code
= Date Code*
= PbFree Package
*Date Code orientation may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
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相關代理商/技術參數 |
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| MMBT6589T1G | 功能描述:兩極晶體管 - BJT 2A 30V Switching PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT7002K | 制造商:Diotec Semiconductor 功能描述: |
| MMBT8099LT1 | 功能描述:兩極晶體管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT8099LT1G | 功能描述:兩極晶體管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT8099LT1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
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