- 您現在的位置：買賣IC網 > PDF目錄385627 > MMBTA13LT1G (ON SEMICONDUCTOR) Darlington Amplifier Transistors PDF資料下載
參數資料
| 型號： | MMBTA13LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Darlington Amplifier Transistors |
| 中文描述： | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 82K |
| 代理商： | MMBTA13LT1G |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 2
1
Publication Order Number:
MMBTA13LT1/D
MMBTA13LT1,
MMBTA14LT1
MMBTA14LT1 is a Preferred Device
Darlington Amplifier
Transistors
NPN Silicon
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CES
30
Vdc
CollectorBase Voltage
V
CBO
30
Vdc
EmitterBase Voltage
V
EBO
10
Vdc
Collector Current Continuous
I
C
300
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 1) T
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
556
°
C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
MMBTA13LT1
SOT23
3,000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBTA13LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
MMBTA14LT1
SOT23
3,000 / Tape & Reel
MMBTA14LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
COLLECTOR 3
BASE
1
EMITTER 2
Preferred
devices are recommended choices for future use
and best overall value.
SOT23 (TO236)
CASE 318
STYLE 6
1
2
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
1x M
1x
= Device Code
x = M for MMBTA13LT1
x = N for MMBTA14LT1
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
M
MARKING DIAGRAM
相關PDF資料 |
PDF描述 |
|---|---|
| MMBTA14LT1G | Darlington Amplifier Transistors |
| MMBTA14LT1 | Darlington Amplifier Transistors NPN Silicon(NPN型達林頓放大器晶體管) |
| MMBTA56LT1 | Driver Transistors PNP Silicon(PNP型驅動器晶體管) |
| MMBV109LT1G | Silicon Epicap Diodes |
| MMBV109LT3 | Silicon Epicap Diodes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBTA13LT3G | 功能描述:達林頓晶體管 SS DL XSTR NPN 30V RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA13-T | 功能描述:達林頓晶體管 300mA 30V RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA13-TP | 功能描述:達林頓晶體管 300mA 30V RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA14 | 功能描述:達林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA14 | 制造商:Fairchild Semiconductor Corporation 功能描述:Small Signal Bipolar Transistor |
發布緊急采購，3分鐘左右您將得到回復。