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參數資料
| 型號： | MMBTA28D87Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-3 |
| 文件頁數： | 8/15頁 |
| 文件大?。?/td> | 870K |
| 代理商： | MMBTA28D87Z |
3
MPSA28/MMBTA28/PZTA28, Rev A
MPSA28
/
MMBT
A28
/
PZT
A28
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage
IC = 100
A, V
BE = 0
80
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
80
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
12
V
ICBO
Collector Cutoff Current
VCB = 60 V, IE = 0
100
nA
ICES
Collector Cutoff Current
VCE = 60 V, VBE = 0
500
nA
IEBO
Emitter Cutoff Current
VEB = 10 V, IC = 0
100
nA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
10,000
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 0.01 mA
IC = 100 mA, IB = 0.1 mA
1.2
1.5
V
VBE(on)
Base-Emitter On Voltage
IC = 100 mA, VCE = 5.0 V
2.0
V
SMALL SIGNAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 5.0,
f = 100 MHz
125
MHz
Cobo
Output Capacitance
VCB = 1.0 V, IE = 0, f = 1.0 MHz
8.0
pF
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
NPN Darlington Transistor
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.001
0.01
0.1
0.2
0
20
40
60
80
100
I - COLLECTOR CURRENT (A)
h
-
T
YPI
C
A
L
PU
L
SED
C
U
R
E
N
T
G
A
IN
(
K
)
C
F
E
25 °C
125 °C
- 40 °C
V
= 5V
CE
Collector-Emitter Saturation
Voltage vs Collect or Current
1
10
100
1000
0
0.4
0.8
1.2
1.6
I - COLLECTOR CURRE NT (mA)
V
-
C
O
L
E
C
T
O
R
E
M
IT
T
E
R
V
O
L
TA
G
E
(
V
)
C
E
(S
A
T
)
- 40 °C
125 °C
ββββ = 1000
25 °C
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| MMBTA42 | 功能描述:兩極晶體管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA42 T/R | 功能描述:開關晶體管 - 偏壓電阻器 TRANS SW TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMBTA42,215 | 功能描述:兩極晶體管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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