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參數資料
| 型號： | MMBTH81 |
| 廠商： | Motorola, Inc. |
| 英文描述： | UHF/VHF TRANSISTOR PMP SILICON |
| 中文描述： | 超高頻/甚高頻硅晶體管的PMP |
| 文件頁數： | 1/4頁 |
| 文件大小： | 73K |
| 代理商： | MMBTH81 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
–20
Vdc
Collector–Base Voltage
–20
Vdc
Emitter–Base Voltage
–3.0
Vdc
DEVICE MARKING
MMBTH81LT1 = 3D
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
R
θ
JA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
R
θ
JA
TJ, Tstg
417
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = –10
μ
Adc, IE = 0)
Emitter–Base Breakdown Voltage (IE = –10
μ
Adc, IC = 0)
Collector Cutoff Current (VCB = –10 Vdc, IE = 0)
Emitter Cutoff Current (VEB = –2.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
–20
—
—
Vdc
–20
—
—
Vdc
–3.0
—
—
Vdc
—
—
–100
nAdc
—
—
–100
nAdc
DC Current Gain (IC = –5.0 mAdc, VCE = –10 Vdc)
Collector–Emitter Saturation Voltage (IC = –5.0 mAdc, IB = –0.5 mAdc)
Base–Emitter On Voltage (IC = –5.0 mAdc, VCE = –10 Vdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
60
—
—
—
VCE(sat)
VBE(on)
—
—
–0.5
Vdc
—
—
–0.9
Vdc
Current–Gain – Bandwidth Product
(IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
fT
600
—
—
MHz
Collector–Base Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Collector–Emitter Capacitance (IB = 0, VCB = –10 Vdc, f = 1.0 MHz)
Ccb
Cce
—
—
0.85
pF
—
—
0.65
pF
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBTH81LT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
COLLECTOR
3
1
BASE
2
EMITTER
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| MMBTH81_Q | 功能描述:兩極晶體管 - BJT PNP RF Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTRA101 RF | 功能描述:兩極晶體管 - BJT PNP digital trans 4.7/4.7kohm RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTRA102 RF | 功能描述:兩極晶體管 - BJT PNP digital trans 10/10kohm RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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