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參數資料
| 型號： | MMBZ15VAL |
| 廠商： | Diodes Inc. |
| 英文描述： | 24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS |
| 中文描述： | 24W和40W峰值雙表面貼裝TVS(瞬間電壓抑制器) |
| 文件頁數： | 1/6頁 |
| 文件大小： | 129K |
| 代理商： | MMBZ15VAL |
1
MOTOROLA
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
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Transient Voltage Suppressors
for ESD Protection
These dual monolithic silicon zener diodes are designed for applications
requiring transient overvoltage protection capability. They are intended for use
in voltage and ESD sensitive equipment such as computers, printers, business
machines, communication systems, medical equipment and other applications.
Their dual junction common anode design protects two separate lines using
only one package. These devices are ideal for situations where board space is
at a premium.
Specification Features:
SOT–23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Peak Power — 24 or 40 Watts @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0
μ
A
ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
Mechanical Characteristics:
Void Free, Transfer–Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel. Replace
the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel.
THERMAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (1)
@ TA
≤
25
°
C
MMBZ5V6ALT1, MMBZ6V2ALT1
MMBZ15VALT1, MMBZ20VALT1
Ppk
24
40
Watts
Total Power Dissipation on FR–5 Board (2) @ TA = 25
°
C
Derate above 25
°
C
°
PD
°
225
1.8
°
mW
°
mW/
°
C
Thermal Resistance Junction to Ambient
R
θ
JA
°
PD
°
556
°
C/W
Total Power Dissipation on Alumina Substrate (3) @ TA = 25
°
C
Derate above 25
°
C
300
2.4
°
mW
mW/
°
C
Thermal Resistance Junction to Ambient
R
θ
JA
TJ
Tstg
417
°
C/W
Junction and Storage Temperature Range
– 55 to +150
°
C
Lead Solder Temperature — Maximum (10 Second Duration)
TL
260
°
C
(1) Non–repetitive current pulse per Figure 5 and derate above TA = 25
°
C per Figure 6.
(2) FR–5 = 1.0 x 0.75 x 0.62 in.
(3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
*Other voltages may be available upon request
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBZ5V6ALT1/D
Rev 1
SOT–23 COMMON ANODE DUAL
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
24 & 40 WATTS
PEAK POWER
CASE 318–08
STYLE 12
LOW PROFILE SOT–23
PLASTIC
PIN 1. CATHODE
2. CATHODE
3. ANODE
1
3
2
Motorola Preferred Devices
1
2
3
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| MMBZ5V6AL | 24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS |
| MMBZ15VDL-7 | 40W PEAK POWER DUAL SURFACE MOUNT TVS |
| MMBZ15VDL | 40W PEAK POWER DUAL SURFACE MOUNT TVS |
| MMBZ20VAL | 24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBZ15VAL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 12V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| MMBZ15VAL/DG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ15VAL-7 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 15V 225mW RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| MMBZ15VAL-7-F | 功能描述:TVS二極管陣列 15V 225mW RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ15VALT1 | 功能描述:TVS二極管陣列 15V 225mW Dual RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
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