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參數(shù)資料
| 型號： | MMDF2P01HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS |
| 中文描述： | 2 A, 12 V, 0.2 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-05, SOIC-8 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 284K |
| 代理商： | MMDF2P01HD |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)(1)
Rating
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
Value
12
Unit
Vdc
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
12
Vdc
±
8.0
3.4
2.1
17
Vdc
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C (2)
Operating and Storage Temperature Range
Thermal Resistance — Junction to Ambient (2)
Adc
Apk
2.0
Watts
– 55 to 150
°
C
R
θ
JA
TL
62.5
°
C/W
°
C
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
DEVICE MARKING
D2P01
(1) Negative sign for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
13
″
12 mm embossed tape
Quantity
MMDF2P01HDR2
2500 units
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MMDF2P01HD/D
SEMICONDUCTOR TECHNICAL DATA
D
S
G
CASE 751–05, Style 11
SO–8
Source–1
Gate–1
Source–2
Gate–2
1
2
3
4
8
7
6
5
Top View
Drain–1
Drain–1
Drain–2
Drain–2
DUAL TMOS POWER FET
2.0 AMPERES
12 VOLTS
RDS(on) = 0.18 OHM
Motorola Preferred Device
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMDF2P02E | DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS |
| MMDF2P02HD | DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF3200Z | DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS |
| MMDF3207 | DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS |
| MMDF3C03HD | COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF2P01HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MMDF2P02E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS |
| MMDF2P02ER2 | 功能描述:MOSFET 25V 2A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2P02ER2G | 功能描述:MOSFET PFET 25V 2.5A 250MO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2P02ER2G-ND | 制造商:ON Semiconductor 功能描述: |
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