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參數資料
| 型號： | MMDF6N02HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS |
| 中文描述： | 偶的TMOS功率MOSFET 6.0安培20伏特 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 193K |
| 代理商： | MMDF6N02HD |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
Dual HDTMOS devices are an advanced series of power
MOSFETs which utilize Motorola’s High Cell Density TMOS
process. These miniature surface mount MOSFETs feature low
RDS(on) and true logic level performance. Dual HDTMOS devices
are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applica-
tions are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular
and cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
R
θ
JA
TL
Value
20
20
±
12
6.5
6.0
52
2.0
– 55 to 150
62.5
260
Unit
Vdc
Vdc
Vdc
Adc
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 70
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes
DEVICE MARKING
D6N02H
(1) Mounted on 1” square FR4 or G–10 board (VGS = 4.5 V, @ 10 seconds).
ORDERING INFORMATION
Device
Reel Size
MMDF6N02HDR2
13
″
Apk
Watts
°
C
°
C/W
°
C
Tape Width
12mm embossed tape
Quantity
2500
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices
are Motorola recommended choices for future use and best overall value.
Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of
the Bergquist Company.
Order this document
by MMDF6N02HD/D
SEMICONDUCTOR TECHNICAL DATA
Source–1
Gate–1
Source–2
Gate–2
1
2
3
4
8
7
6
5
Top View
Drain–1
Drain–1
Drain–2
Drain–2
D
S
G
CASE 751–05, Style 11
SO–8
DUAL TMOS
POWER MOSFET
6.0 AMPERES
20 VOLTS
RDS(on) = 0.035 OHM
Motorola Preferred Device
REV 1
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相關代理商/技術參數 |
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|---|---|
| MMDF6N02HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
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| MMDF6N03HDR2 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 6 Amps, 30 Volts |
| MMDF7N02Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS |
| MMDF7N02ZR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 20V 7A 8-Pin SOIC N T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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