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參數資料
| 型號： | MMFT1N10E |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | MEDIUM POWER TMOS FET 1 AMP 100 VOLTS |
| 中文描述： | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數： | 1/10頁 |
| 文件大小： | 236K |
| 代理商： | MMFT1N10E |
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement Mode
Silicon Gate TMOS E–FET
SOT–223 for Surface Mount
This advanced E–FET is a TMOS Medium Power MOSFET
designed to withstand high energy in the avalanche and commuta-
tion modes. This new energy efficient device also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
dc–dc converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. The device is
housed in the SOT–223 package which is designed for medium
power surface mount applications.
Silicon Gate for Fast Switching Speeds
Low RDS(on) — 0.25
max
The SOT–223 Package can be Soldered Using Wave or Re-
flow. The Formed Leads Absorb Thermal Stress During Sol-
dering, Eliminating the Possibility of Damage to the Die
Available in 12 mm Tape and Reel
Use MMFT1N10ET1 to order the 7 inch/1000 unit reel.
Use MMFT1N10ET3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDS
VGS
100
Vdc
Gate–to–Source Voltage — Continuous
±
20
Drain Current — Continuous
Drain Current
— Pulsed
ID
IDM
1
4
Adc
Total Power Dissipation @ TA = 25
°
C
Derate above 25
°
C
PD(1)
0.8
6.4
Watts
mW/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–65 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 60 V, VGS = 10 V, Peak IL= 1 A, L = 0.2 mH, RG = 25
)
168
mJ
DEVICE MARKING
1N10
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
R
θ
JA
156
°
C/W
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
TL
260
10
°
C
Sec
(1) Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint.
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 3
Order this document
by MMFT1N10E/D
SEMICONDUCTOR TECHNICAL DATA
MEDIUM POWER
TMOS FET
1 AMP
100 VOLTS
RDS(on) = 0.25 OHM
Motorola Preferred Device
CASE 318E–04, STYLE 3
TO–261AA
1
2
3
4
D
S
G
2,4
3
1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMFT1N10ET1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 100V 1A 4-Pin(3+Tab) SOT-223 T/R 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMFT1N10ET3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMFT1N20T1 | 制造商:ON Semiconductor 功能描述: |
| MMFT2406T | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MEDIUM POWER TMOS FET 700 mA 240 VOLTS |
| MMFT2406T1 | 功能描述:MOSFET N-CH 240V 700MA SOT223 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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