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參數資料
| 型號： | MMFT1N10E |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | MEDIUM POWER TMOS FET 1 AMP 100 VOLTS |
| 中文描述： | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數： | 2/10頁 |
| 文件大小： | 236K |
| 代理商： | MMFT1N10E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage, (VGS = 0, ID = 250
μ
A)
Zero Gate Voltage Drain Current, (VDS = 100 V, VGS = 0)
Gate–Body Leakage Current, (VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
100
—
—
Vdc
—
—
10
μ
Adc
—
—
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage, (VDS = VGS, ID = 1 mA)
Static Drain–to–Source On–Resistance, (VGS = 10 V, ID = 0.5 A)
Drain–to–Source On–Voltage, (VGS = 10 V, ID = 1 A)
Forward Transconductance, (VDS = 10 V, ID = 0.5 A)
VGS(th)
RDS(on)
VDS(on)
gFS
2
—
4.5
Vdc
—
—
0.25
Ohms
—
—
0.33
Vdc
—
2.2
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1 MHz)
Ciss
Coss
Crss
—
410
—
pF
Output Capacitance
(VDS = 20 V,
VGS = 0,
—
145
—
Reverse Transfer Capacitance
—
55
—
SWITCHING CHARACTERISTICS
Turn–On Delay Time
RGS = 25 ohms)
td(on)
tr
td(off)
tf
Qg
—
15
—
Rise Time
(VDD = 25 V, ID = 0.5 A
VGS = 10 V, RG = 50 ohms,
—
15
—
ns
Turn–Off Delay Time
—
30
—
Fall Time
—
32
—
Total Gate Charge
See Figures 15 and 16
—
7
—
nC
Gate–Source Charge
(VDS = 80 V, ID = 1 A,
VGS = 10 Vdc)
Qgs
Qgd
—
1.3
—
Gate–Drain Charge
—
3.2
—
SOURCE DRAIN DIODE CHARACTERISTICS(1)
Forward On–Voltage
IS = 1 A, VGS = 0
VSD
ton
—
0.8
—
Vdc
Forward Turn–On Time
IS = 1 A, VGS = 0,
VR = 50 V
Limited by stray inductance
Reverse Recovery Time
dlS/dt = 400 A/
μ
s,
trr
—
90
—
ns
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
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