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參數資料
| 型號： | MMDFS3P303-D |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 3 Amps, 30 Volts |
| 中文描述： | 功率MOSFET 3安培，30伏特 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 162K |
| 代理商： | MMDFS3P303-D |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 2
1
Publication Order Number:
MMDFS3P303/D
MMDFS3P303
Power MOSFET
3 Amps, 30 Volts
P–Channel SO–8, FETKY
The FETKY product family incorporates low RDS(on), MOSFETs
packaged with industry leading, low forward drop, low leakage
Schottky Barrier rectifiers to offer high efficiency components in a
space saving configuration. Independent pinouts for MOSFET and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications
such as Buck Converter, Buck–Boost, Synchronous Rectification,
Low Voltage Motor Control, and Load Management in Battery Packs,
Chargers, Cell Phones and other Portable Products.
Power MOSFET with Low VF, Low IR Schottky Rectifier
Lower Component Placement and Inventory Costs along with
Board Space Savings
R2 Suffix for Tape and Reel (2500 units/13
″
reel)
Mounting Information for SO–8 Package Provided
IDSS Specified at Elevated Temperature
Applications Information Provided
Marking: 3P303
MOSFET MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
(Notes 1. & 2.)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
30
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M )
Gate–to–Source Voltage – Continuous
30
Vdc
20
Vdc
Drain Current
– Continuous @ TA = 25
°
C
– Continuous @ TA = 100
°
C
– Single Pulse (tp
10 s)
ID
ID
IDM
3.5
2.25
12
Adc
Apk
Total Power Dissipation @ TA = 25
°
C
(Note 3.)
PD
2.0
Watts
Single Pulse Drain–to–Source Avalanche
Energy – STARTING TJ = 25
°
C
VDD = 30 Vdc, VGS = 10 Vdc, VDS = 20 Vdc,
IL = 9.0 Apk, L = 10 mH, RG = 25
1. Negative sign for P–channel device omitted for clarity.
2. Pulse Test: Pulse Width
≤
250
μ
s, Duty Cycle
≤
2.0%.
3. Mounted on 2
″
square FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided),
10 sec. max.
EAS
375
mJ
Anode
1
2
3
4
8
7
6
5
Top View
Anode
Source
Gate
Cathode
Cathode
Drain
Drain
Device
Package
Shipping
ORDERING INFORMATION
MMDFS3P303R2
SO–8
2500 Tape & Reel
http://onsemi.com
D
S
G
P–Channel
SO–8
CASE 751
STYLE 18
LYWW
MARKING
DIAGRAM
6N303
L
Y
WW
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
1
8
3 AMPERES
30 VOLTS
RDS(on) = 100 m
VF = 0.42 Volts
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| MMDFS3P303R2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| MMDJ3P03BJT | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES |
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