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參數資料
| 型號： | MMFT2955E |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 1 Amp, 60 Volts P-Channel(1A，60V，P溝道增強型功率MOS場效應管) |
| 中文描述： | 功率MOSFET 1安培60伏特P -通道（第1A，60V的P溝道增強型功率馬鞍山場效應管） |
| 文件頁數： | 1/12頁 |
| 文件大小： | 113K |
| 代理商： | MMFT2955E |
Publication Order Number:
MMFT2955E/D
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 5
1
MMFT2955E
Preferred Device
Power MOSFET
1 Amp, 60 Volts
P–Channel SOT–223
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This new energy efficient device
also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. The device is
housed in the SOT–223 package which is designed for medium power
surface mount applications.
Silicon Gate for Fast Switching Speeds
The SOT–223 Package can be Soldered Using Wave or Reflow. The
Formed Leads Absorb Thermal Stress During Soldering, Eliminating
the Possibility of Damage to the Die
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDS
60
Vdc
Gate–to–Source Voltage – Continuous
VGS
ID
IDM
±
15
Drain Current – Continuous
Drain Current
– Pulsed
1.2
4.8
Adc
Total Power Dissipation @ TA = 25
°
C
Derate above 25
°
C
PD
(Note 1.)
0.8
6.4
Watts
mW/
°
C
Operating and Storage Temperature
Range
TJ, Tstg
–65 to
150
°
C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 25 V, VGS = 10 V, Peak
IL= 1.2 A, L = 0.2 mH, RG = 25
)
THERMAL CHARACTERISTICS
EAS
108
mJ
Thermal Resistance –
Junction–to–Ambient (surface mounted)
R
θ
JA
156
°
C/W
Maximum Temperature for Soldering
Purposes,
Time in Solder Bath
TL
260
10
°
C
Sec
1. Power rating when mounted on FR–4 glass epoxy printed circuit board using
recommended footprint.
1 AMPERE
60 VOLTS
RDS(on) = 300 m
Device
Package
Shipping
ORDERING INFORMATION
MMFT2955ET1
SOT–223
1000 Tape & Reel
MMFT2955ET3
SOT–223
1000 Tape & Reel
D
S
G
1
2
3
4
P–Channel
TO–261AA
CASE 318E
STYLE 3
http://onsemi.com
LWW
MARKING
DIAGRAM
2955E
L
WW
= Location Code
= Work Week
PIN ASSIGNMENT
Preferred
devices are recommended choices for future use
and best overall value.
3
Source
2
1
4
Gate
Drain
Drain
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMFT2955ET1 | 制造商:ON Semiconductor 功能描述:MOSFET P SOT-223 |
| MMFT2N02EL | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MEDIUM POWER LOGIC LEVEL TMOS FET 1.6 AMP 20 VOLTS |
| MMFT2N02ELT1 | 功能描述:MOSFET N-CH 20V 1.6A SOT223 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| MMFT2N25E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 250 VOLTS |
| MMFT2N25ET3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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