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參數(shù)資料
| 型號(hào)： | MMFT2N25E |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SPST, 150mA PC Mount Pushbutton |
| 中文描述： | 2000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 139K |
| 代理商： | MMFT2N25E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 0.25 mA)
Temperature Coefficient (Positive)
BVDSS
250
—
—
324
—
—
Vdc
V/
°
C
Zero Gate Voltage Drain Current
(VDS = 250 V, VGS = 0)
(VDS = 250 V, VGS = 0, TJ = 125
°
C)
IDSS
—
—
—
—
10
100
μ
Adc
Gate–Body Leakage Current
(VGS =
±
20 V, VDS = 0)
ON CHARACTERISTICS (1)
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.8
5.7
4.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 V, ID = 1.0 Adc)
RDS(on)
—
2.1
3.5
Ohms
Drain–to–Source On–Voltage
(VGS = 10 V, ID = 2.0 A)
(VGS = 10 V, ID = 1.0 A, TJ = 125
°
C)
VDS(on)
—
—
—
—
8.40
7.35
Vdc
Forward Transconductance
(VDS = 8.0 V, ID = 2.0 Adc)
gFS
0.44
1.2
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V,
VGS = 0,
1 0 MHz)
f = 1.0 MHz)
Ciss
—
137
190
pF
Output Capacitance
Coss
Crss
—
30
40
Transfer Capacitance
—
7.0
10
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
(VDS= 125 V
(VDS = 125 V,
ID = 2.0 A,
RG = 9.1 Ohms,
VGS= 10 V)
VGS = 10 V)
td(on)
tr
—
9.2
20
ns
Rise Time
—
6.6
10
Turn–Off Delay Time
,
td(off)
tf
QT
Q1
Q2
Q3
—
13
30
Fall Time
—
8.5
20
Gate Charge
(VDS = 200 V
ID= 2 0 A
ID = 2.0 A,
VGS = 10 V)
—
4.7
10
nC
—
1.3
—
—
3.2
—
—
2.3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
IS = 2.0 A, VGS = 0 V
IS = 2.0 A, VGS = 0 V, TJ = 125
°
C
VSD
VSD
trr
ta
tb
qrr
—
0.94
2.0
Vdc
—
0.83
—
Reverse Recovery Time
(IS = 2.0 A,
(S
dlS/dt = 100 A/
μ
s)
2 0 A
—
104
—
nS
—
63
—
—
41
—
Reverse Recovery Stored Charge
—
0.365
—
C
(1) Pulse Test: Pulse Width
≤
300
μ
S, Duty Cycle
≤
2%.
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