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參數資料
| 型號： | MMFT5P03HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS |
| 中文描述： | TMOS是中功率場效應管5.2安培30伏 |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 198K |
| 代理商： | MMFT5P03HD |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MMFT5P03HD is an advanced power MOSFET which utilizes
Motorola’s High Cell Density HDTMOS process. This miniature
surface mount MOSFET features ultra low RDS(on) and true logic
level performance. It is capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a very low reverse recovery time. MMFT5P03HD devices are
designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dc–dc
converters, and power management in portable and battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SOT–223 Surface Mount Package — Saves Board
Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
DEVICE MARKING
ORDERING INFORMATION
5P03H
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
4000 units
MMFT5P03HDT3
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices
are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Bergquist Company.
REV 2
Order this document
by MMFT5P03HD/D
SEMICONDUCTOR TECHNICAL DATA
CASE 318E–04, Style 3
TO–261AA
TMOS MEDIUM
POWER FET
5.2 AMPERES
30 VOLTS
RDS(on) = 100 m
Motorola Preferred Device
D
S
G
1
2, 4
3
1
3
2
4
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMFT5P03HDT1 | 功能描述:MOSFET P-CH 30V 3.7A SOT223 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| MMFT5P03HDT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS P-CHANNEL FIELD FEECT TRANSISTOR |
| MMFT6N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER 6.0 AMPERES 30 VOLTS |
| MMFT960T1 | 功能描述:MOSFET 60V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMFT960T1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 |
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