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參數資料
| 型號： | MMG05N60D |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 0.5 A, 600 V, N-CHANNEL IGBT, TO-261A |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 135K |
| 代理商： | MMG05N60D |
1
Motorola, Inc. 1997
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate
protection zener. Fast switching characteristics result in efficient
operation at higher frequencies.
Built–In Free Wheeling Diode
Built–In Gate Protection Zener Diode
Industry Standard Package (SOT223)
High Speed Eoff: Typical 6.5 J @ IC = 0.3 A; TC = 125
°
C and
dV/dt = 1000 V/ s
Robust High Voltage Termination
Robust Turn–Off SOA
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Parameters
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCGR
VCGR
IC25
IC90
ICM
600
Vdc
Collector–Gate Voltage (RGE = 1.0 M
)
Gate–Emitter Voltage — Continuous
600
Vdc
±
15
Vdc
Collector Current — Continuous @ TC = 25
°
C
— Continuous @ TC = 90
°
C
— Repetitive Pulsed Current (1)
0.5
0.3
2.0
Adc
Total Device Dissipation @ TC = 25
°
C
Operating and Storage Junction Temperature Range
PD
1.0
Watt
TJ, Tstg
R
θ
JC
R
θ
JA
–55 to 150
°
C
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
30
150
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
TL
260
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS
(TC
≤
150
°
C)
Single Pulse Drain–to–Source Avalanche
Energy – Starting @ TC = 25
°
C
Energy – Starting
@ TC = 125
°
C
VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25
(1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
EAS
125
40
mJ
Designer’s is a trademark of Motorola, Inc.
Order this document
by MMG05N60D/D
SEMICONDUCTOR TECHNICAL DATA
POWERLUX
IGBT
0.5 A @ 25
°
C
600 V
CASE 318E–04
TO–261A
1
2
3
4
1 = G
2 = 4 = C
3 = E
C
E
G
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