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參數資料
| 型號： | MMPQ2222 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Quad General Purpose Transistors |
| 中文描述： | 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 2/4頁 |
| 文件大小： | 108K |
| 代理商： | MMPQ2222 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 100 A, VCE = 10 V)
(IC = 1.0 mA, VCE = 10 V)
(IC = 10 mA, VCE = 10 V)
MMPQ2222A
MMPQ2222A
MMPQ2222
MMPQ2222A
MMPQ2222
MMPQ2222A
MMPQ2222
MMPQ2222A
MMPQ2222A
(IC = 150 mA, VCE = 10 V)
(IC = 300 mA, VCE = 10 V)
(IC = 500 mA, VCE = 10 V)
(IC = 150 mA, VCE = 1.0 V)
Collector–Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
hFE
35
50
75
75
100
100
30
40
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
300
—
—
—
—
MMPQ2222
MMPQ2222A
MMPQ2222
MMPQ2222A
(IC = 300 mAdc, IB = 30 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base–Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
VCE(sat)
—
—
—
—
—
—
—
—
0.4
0.3
1.6
1.0
Vdc
MMPQ2222
MMPQ2222A
MMPQ2222
MMPQ2222A
(IC = 300 mAdc, IB = 30 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product(1)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
VBE(sat)
—
—
—
—
—
—
—
—
1.3
1.2
2.6
2.0
Vdc
fT
200
350
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
4.5
—
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Cib
—
17
—
pF
Turn–On Time
(VCC = 30 Vdc, VBE(off) = –0.5 Vdc, IC = 150 mAdc,
IB1 = 15 mAdc)
ton
—
25
—
ns
Turn–Off Time
(VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc)
toff
—
250
—
ns
1. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMPQ2222 | 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR |
| MMPQ2222_Q | 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ2222A | 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ2222A | 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR NPN 40V SOIC |
| MMPQ2222A_Q | 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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