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參數資料
型號: MMPQ2222R2
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SO-16
文件頁數: 1/22頁
文件大小: 295K
代理商: MMPQ2222R2
2–428
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Quad General Purpose
Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
MMPQ2222
MMPQ2222A
Unit
Collector – Emitter Voltage
VCEO
30
40
Vdc
Collector – Base Voltage
VCB
60
75
Vdc
Emitter – Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
IC
500
mAdc
Each
Transistor
Four
Transistors
Equal Power
Total Power Dissipation
@ TA = 25°C
Derate above 25
°C
PD
0.52
4.2
1.0
8.0
Watts
mW/
°C
Total Power Dissipation
@ TC = 25°C
Derate above 25
°C
PD
0.8
6.4
2.4
19.2
Watts
mW/
°C
Operating and Storage
Junction Temperature Range
TJ, Tstg
–55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
MMPQ2222
(IC = 10 mAdc, IB = 0)
MMPQ2222A
V(BR)CEO
30
40
Vdc
Collector – Base Breakdown Voltage
MMPQ2222
(IC = 10 mAdc, IE = 0)
MMPQ2222A
V(BR)CBO
60
75
Vdc
Emitter – Base Breakdown Voltage
(IB = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
MMPQ2222
(VCB = 60 Vdc, IE = 0)
MMPQ2222A
ICBO
50
10
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
100
nAdc
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMPQ2222
MMPQ2222A
*Motorola Preferred Device
CASE 751B–05, STYLE 4
SO–16
1
16
*
1
2
3
4
5
6
7
8
10
11
12
13
14
15
16
9
REV 1
相關PDF資料
PDF描述
MMPQ2907 600 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MMPQ2907R2 600 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MMPQ2907AR2 600 mA, 60 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MMPQ2907R1 600 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MMPQ2907A 600 mA, 60 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
相關代理商/技術參數
參數描述
MMPQ2369 功能描述:兩極晶體管 - BJT 500mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMPQ2369 WAF 制造商:ON Semiconductor 功能描述:
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MMPQ2369R2 功能描述:兩極晶體管 - BJT 500mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMPQ2907 功能描述:兩極晶體管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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