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參數資料
型號: MMSF5P02HDR2
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 8700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: CASE 751-07, SOP-8
文件頁數: 1/11頁
文件大小: 277K
代理商: MMSF5P02HDR2
Publication Order Number:
MMSF5P02HD/D
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 4
1
MMSF5P02HD
Preferred Device
Power MOSFET
5 Amps, 20 Volts
PChannel SO8
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the draintosource
diode has a very low reverse recovery time. MiniMOS
t devices are
designed for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dcdc converters,
and power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO8 Package Provided
D
S
G
PChannel
NC
1
2
3
4
8
7
6
5
Top View
Source
Gate
Drain
1
8
5 AMPERES
20 VOLTS
RDS(on) = 30 mW
Device
Package
Shipping
ORDERING INFORMATION
MMSF5P02HDR2
SO8
2500 Tape & Reel
SO8
CASE 751
STYLE 13
http://onsemi.com
LYWW
MARKING
DIAGRAM
S5P02H
L
= Location Code
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
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MMSF5P02HDR2 8700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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