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參數資料
| 型號： | MMSF7PO3HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS SINGLE P-CHANNEL FIELD EFFECT TRANSISTORS |
| 中文描述： | TMOS是單P溝道場效應晶體管 |
| 文件頁數： | 3/10頁 |
| 文件大?。?/td> | 228K |
| 代理商： | MMSF7PO3HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
R
0
0
0.2
0.4
0.6
2.0
0
8.0
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
1.5
2.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
2.5
4.0
ID
Figure 2. Transfer Characteristics
2.0
4.0
10
0.20
0.25
0.30
1.0
2.0
3.0
9.0
0.020
0.040
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
–50
0.8
1.2
1.6
1.0
100
1000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage
Current versus Voltage
I
VGS = 0 V
0.8
1.0
3.0
1.2
1.4
3.5
0.15
6.0
8.0
–25
0
25
50
75
100
125
150
TJ = 125
°
C
12
0.050
0.030
6.0
0
0.4
0
5.0
20
30
8.0
10
12
6.0
0.10
0.025
10
100
°
C
4.0
2.0
4.0
2.0
0.05
15
25
1.6
1.8
3.0
5.0
7.0
9.0
0.045
0.035
4.0
5.0
6.0
7.0
8.0
0.2
0.6
1.0
1.4
10
TJ = 25
°
C
ID = 7.0 A
10 V
6.0 V
4.5 V
4.3 V
4.1 V
3.9 V
3.7 V
3.5 V
VGS = 3.3 V
3.1 V
2.9 V
2.7 V
2.5 V
TJ = 25
°
C
TJ = – 55
°
C
100
°
C
25
°
C
TJ = 25
°
C
VGS = 4.5 V
10 V
VGS = 10 V
VDS
≥
10 V
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