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參數(shù)資料
| 型號(hào)： | MMT10V275 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:19 x 36; Jacket Color:Black; Approval Bodies:UL; Approval Categories:UL AWM Style 1180; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/5 Type EE RoHS Compliant: Yes |
| 中文描述： | 275 V, 100 A, SILICON SURGE PROTECTOR |
| 封裝： | CASE 416A-01, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 90K |
| 代理商： | MMT10V275 |
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
High Voltage Bidirectional TVS Devices
These transient voltage suppression (TVS) devices prevent overvoltage
damage to sensitive circuits by lightning, induction and power line crossings.
They are breakover–triggered crowbar protectors. Turn–off occurs when the
surge current falls below the holding current value.
Applications include current loop lines in telephony and control systems,
central office stations, repeaters, building and residence entrance terminals and
electronic telecom equipment.
High Surge Current Capability
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non–Semiconductor De-
vices
Fail–Safe. Shorts When Overstressed, Preventing Continued Unprotected
Operation.
DEVICE RATINGS:
–4
0
°
C to 50
°
C for MMT10V275
–40
°
C to 65
°
C for MMT10V400 (except surge)
Parameter
Symbol
Value
Unit
Peak Repetitive Off–State Voltage — Maximum
MMT10V275
MMT10V400
VDM
±
200
±
265
Volts
On–State Surge Current — Maximum Nonrepetitive (MMT10V400 –20
°
C to 65
°
C)
10 x 1000
μ
s exponential wave, Notes 1, 2, 3
60 Hz ac, 1000 V(rms), RS = 1.0 k
, 1 second
60 Hz ac, 480 V(rms), RS = 48
, 2 seconds
Rate of Change of On–State Current — Maximum Nonrepetitive
Critical Damped Wave, C = 1.2
μ
F, L = 16
μ
H, R = 7.4,
VCI = 1000 V, I(pk) = 100 A (short circuit), 0 to 50% I (pk)
DEVICE THERMAL RATINGS
ITSM1
ISTM2
ISTM3
di/dt
±
100
±
10
±
1.0
A(pk)
A(rms)
A(rms)
50
A/
μ
s
Operating Temperature Range
Blocking or Conducting State
TJ1
–40 to +125
°
C
Overload Junction Temperature — Maximum
Conducting State Only
TJ2
+175
°
C
Thermal Resistance, Junction to Case — Maximum
R
θ
JC
—
1.5
°
C/W
Thermal Resistance, Case to Ambient, Without Heatsink
+200
°
C/W
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMT10V275/D
SEMICONDUCTOR TECHNICAL DATA
BIDIRECTIONAL
THYRISTOR SURGE
SUPPRESSORS
25 WATTS STEADY STATE
CASE 416A–01
*Motorola preferred devices
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMT10V400 | Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:0.5m; Sensor Output:NPN LO; Switch Terminals:Quick Connect; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensing Mode:Diffuse |
| MMT2907 | GENERAL PURPOSE TRANSISTOR |
| MMT3960A | RF AND HIGH-SPEED SWITCHING TRANSSITOR |
| MMUN2112LT1 | PNP SILICON BIAS RESISTOR TRANSISTOR |
| MMUN2111LT1 | PNP SILICON BIAS RESISTOR TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMT10V400 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:BIDIRECTIONAL THYRISTOR SURGE SUPPRESSORS 25 WATTS STEADY STATE |
| MMT-110-01-F-DH | 制造商:Samtec Inc 功能描述:CONN UNSHRD HDR HDR 20 POS 2MM SLDR RA SMD - Bulk |
| MMT-110-01-F-DH-005 | 制造商:Samtec Inc 功能描述:CONN UNSHRD HDR HDR 20 POS 2MM SLDR RA SMD - Bulk |
| MMT-110-01-F-DH-A | 制造商:Samtec Inc 功能描述:CONN UNSHRD HDR HDR 20 POS 2MM SLDR RA SMD - Bulk |
| MMT-110-01-F-DH-K | 制造商:Samtec Inc 功能描述:2MM SMT STRIPS - Bulk |
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