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參數資料
| 型號： | MMT10V275 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:19 x 36; Jacket Color:Black; Approval Bodies:UL; Approval Categories:UL AWM Style 1180; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/5 Type EE RoHS Compliant: Yes |
| 中文描述： | 275 V, 100 A, SILICON SURGE PROTECTOR |
| 封裝： | CASE 416A-01, 2 PIN |
| 文件頁數： | 2/4頁 |
| 文件大小： | 90K |
| 代理商： | MMT10V275 |
2
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Breakover Voltage
(dv/dt = 100 V/
μ
s, ISC = 10 A, Vdc = 1000 V)
MMT10V275
MMT10V400
V(BO)1
—
—
—
—
275
400
Volts
Breakover Voltage
(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms),
RI = 1.0 k
, t = 0.5 cycle, Note 2)
MMT10V275
MMT10V400
V(BO)2
—
—
—
—
275
400
Volts
Breakover Voltage Temperature Coefficient
dV(BO)/dTJ
V(BR)
—
0.05
—
%/
°
C
Breakdown Voltage
(I(BR) = 1.0 mA)
MMT10V275
MMT10V400
200
265
—
—
—
—
Volts
Breakdown Voltage Temperature Coefficient
dV(BO)/dTJ
ID
VT
—
0.11
—
%/
°
C
Off State Current (VD = 160 V)
On–State Voltage (IT = 10 A)
(PW
≤
300
μ
s, Duty Cycle
≤
2%, Note 2)
—
—
3.0
μ
A
—
3.0
4.0
Volts
Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 k
)
Holding Current
(10 x 100 Ms exponential wave, IT = 10 A, V = 52 V, RS = 200
)
IBO
IH
—
500
—
mA
Note 2
—
400
—
mA
Critical Rate of Rise of Off–State Voltage
(Linear waveform, VD = 0.8 x Rated VDRM, TJ = 125
°
C)
dv/dt
2000
—
—
V/
μ
s
Capacitance (f = 1.0 MHz, 50 V, 15 mV)
CO
—
55
—
pF
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
3. Requires
θ
CS
≤
6
°
C/W each side, infinite heatsink.
TA
R
θ
S(A1)
R
θ
C(S1)
TS1
R
θ
J(C1)
R
θ
J(C2)
R
θ
C(S2)
TC2
R
θ
S(A2)
TA
TC1
TJ
TS2
PD
Terms in the model signify:
TA = Ambient Temp.
TS = Heatsink Temp.
TC = Case Temp.
TJ = Junction Temp.
R
θ
SA = Thermal Resistance, Heatsink to Ambient
R
θ
CS = Thermal Resistance, Case to Heatsink
R
θ
JC = Thermal Resistance, Junction to Case
PD = Power Dissipation
Subscripts 1 and 2 denote the device terminals, MT1 and MT2, respectively.
R
θ
CS = 6
°
C/W maximum (each side)
R
θ
JC = 3
°
C/W maximum (each side)
The R
θ
CS values are estimates for dry mounting with heatsinks contacting the
raised pedestal on the package. For minimum thermal resistance, the device
should be sandwiched between clean, flat, smooth conducting electrodes and
securely held in place with a compressive force of 2 pounds maximum. The
electrodes should contact the entire pedestal area. When the device is
mounted symmetrically, the thermal resistances are identical. The values for
R
θ
SA and R
θ
CS are controlled by the user and depend on heatsink design and
mounting conditions.
Thermal resistance values are:
Figure 1. Thermal Circuit, Device Mounted Between Heatsinks
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